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8PA60N06AA-G

Huajing Microelectronics
Part Number 8PA60N06AA-G
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Jan 30, 2019
Detailed Description Silicon N-Channel Power MOSFET 8PA60N06 AA-G ○R General Description： 8PA60N06 AA-G, the silicon N-channel Enhanced V...
Datasheet PDF File 8PA60N06AA-G PDF File

8PA60N06AA-G
8PA60N06AA-G

Overview
Silicon N-Channel Power MOSFET 8PA60N06 AA-G ○R General Description： 8PA60N06 AA-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is SOP8, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Powe...


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