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IFN412

Part Number	IFN412
Manufacturer	InterFET
Description	N-Channel Matched Dual Silicon Junction Field-Effect Transistor
Published	Feb 4, 2019
Detailed Description	8/2014 IFN410, IFN411, IFN412 N-Channel Matched Dual Silicon Junction Field-Effect Transistor ∙ Improved Replacements...
Datasheet	IFN412 PDF File

Overview

8/2014 IFN410, IFN411, IFN412 N-Channel Matched Dual Silicon Junction Field-Effect Transistor ∙ Improved Replacements for the U410, U411, & U412 ∙ Low Noise Differential Amplifier ∙ Differential Amplifier ∙ Wide-Band Amplifier Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -40V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 375 mW Power Derating 3.
0 mW/oC Operating Temperature Range Storage Temperature Range -55°C to +125°C -65oC to +150oC At 25oC free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage Drain Satur...

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