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IXTN660N04T4

IXYS
Part Number IXTN660N04T4
Manufacturer IXYS
Description Power MOSFET
Published Feb 6, 2019
Detailed Description TrenchT4TM Power MOSFET Advance Technical Information IXTN660N04T4 D VDSS = ID25 = RDS(on)  40V 660A 0.85m N-Chan...
Datasheet PDF File IXTN660N04T4 PDF File

IXTN660N04T4
IXTN660N04T4

Overview
TrenchT4TM Power MOSFET Advance Technical Information IXTN660N04T4 D VDSS = ID25 = RDS(on)  40V 660A 0.
85m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S S miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 50/60 Hz, RMS t = 1 minute IISOL  1mA t = 1 second Mounting Torque Terminal Connection Torque Maximum Ratings 40 40 V V 15 V 660 A 200 1800 A A 330 A 5J 1040 W -55 .
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+175 175 -55 .
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+175 ...


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