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IXTT02N450HV

IXYS
Part Number IXTT02N450HV
Manufacturer IXYS
Description High Voltage Power MOSFET
Published Feb 6, 2019
Detailed Description High Voltage Power MOSFET IXTT02N450HV IXTH02N450HV VDSS ID25 RDS(on) = 4500V = 200mA  625 N-Channel Enhancement ...
Datasheet PDF File IXTT02N450HV PDF File

IXTT02N450HV
IXTT02N450HV


Overview
High Voltage Power MOSFET IXTT02N450HV IXTH02N450HV VDSS ID25 RDS(on) = 4500V = 200mA  625 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque TO-268HV TO-247HV Maximum Ratings 4500 4500 V V 20 V 30 V 200 mA 600 mA 113 W - 55 .
.
.
+150 150 - 55 .
.
.
+150 C C C 300 °C 260 °C 1.
13/10 Nm/lb.
in 4g 6g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 3.
6kV, VGS = 0V VDS = 4.
5kV VDS = 3.
6kV TJ = 125C RDS(on) VGS = 10V, ID = 10mA, Note 1 Characteristic Values Min.
Typ.
Max.
4.
0 6.
5 V 100 nA 5 A 10 μA 15 μA ...


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