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IXFN140N30P

IXYS
Part Number IXFN140N30P
Manufacturer IXYS
Description Power MOSFET
Published Feb 6, 2019
Detailed Description PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN140N30P Symbol VDS...
Datasheet PDF File IXFN140N30P PDF File

IXFN140N30P
IXFN140N30P

Overview
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN140N30P Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.
6mm (0.
062 in.
) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting torque Terminal connection torque t = 1min t = 1s Maximum Ratings 300 300 V V ±20 V ± 30 V 110 A 100 A 300 A 70 A 5J 20 700 -55 .
.
.
+150 150 -55 .
.
.
+150 V/ns W °C °C °C 300 °C 2500 3000 V~ V~ ...


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