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SJMN11A70I

KODENSHI KOREA
Part Number SJMN11A70I
Manufacturer KODENSHI KOREA
Description N-Channel Super Junction MOSFET
Published Feb 7, 2019
Detailed Description SJMN11A70I Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=750V (@TJ=150C)...
Datasheet PDF File SJMN11A70I PDF File

SJMN11A70I
SJMN11A70I

Overview
SJMN11A70I Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=750V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.
33 (Typ.
)  Ultra low gate charge: Qg=23nC (Typ.
)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN11A70I SJMN11A70 I-PAK GDS I-PAK Marking Information SJMN 11A70 YWW Column 1, 2: Device Code Column 3: Production Information e.
g.
) YWW -.
Y: Year Code -.
WW : Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) (Note 1) Drain current (Pulsed) (Note 1) Single pulsed av...


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