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D82AN2

Part Number	D82AN2
Manufacturer	GE
Description	FIELD EFFECT POWER TRANSISTOR
Published	Feb 10, 2019
Detailed Description	~ffi1DUYAOO ~ FIELD EFFECT POWER TRANSISTOR IRFD2Z0,2Z1 D82AN2-,_M2 0.32 AMPERES 200, 150 VOLTS ROS(ON) = 5.0 .0. This...
Datasheet	D82AN2 PDF File

Overview

~ffi1DUYAOO ~ FIELD EFFECT POWER TRANSISTOR IRFD2Z0,2Z1 D82AN2-,_M2 0.
32 AMPERES 200, 150 VOLTS ROS(ON) = 5.
0 .
0.
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL .
oCASE STYLE 4...

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