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SED3030M

Part Number	SED3030M
Manufacturer	Sino-IC
Description	N-Channel MOSFET
Published	Feb 22, 2019
Detailed Description	SED3030M N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology a...
Datasheet	SED3030M PDF File

Overview

SED3030M N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of application Features For a single MOSFET  VDS = 30V  RDS(ON) = 7.
4mΩ@VGS=10V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Symbol VDS VGS ID PD EAS TJ Rating 30 ±20 30 80 40 72 -55 to 175 Uni...

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SED3030M N-Channel MOSFET - Sino-IC

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