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HYG210P06LQ1U

HOOYI
Part Number HYG210P06LQ1U
Manufacturer HOOYI
Description P-Channel Enhancement Mode MOSFET
Published Feb 25, 2019
Detailed Description HYG210P06LQ1 D/U/V P-Channel Enhancement Mode MOSFET Feature  -60V/-40A RDS(ON)= 19mΩ(typ.)@VGS = -10V RDS(ON)= 25mΩ(...
Datasheet PDF File HYG210P06LQ1U PDF File

HYG210P06LQ1U
HYG210P06LQ1U

Overview
HYG210P06LQ1 D/U/V P-Channel Enhancement Mode MOSFET Feature  -60V/-40A RDS(ON)= 19mΩ(typ.
)@VGS = -10V RDS(ON)= 25mΩ(typ.
)@VGS = -4.
5V  100% avalanche tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Power Management in DC/DC converter.
 Load switching.
 Motor control.
P-Channel MOSFET Ordering and Marking Information DUV G210P06L G210P06L G210P06L XXXYWXXXXX XXXYWXXXXX XXXYWXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XXXYWXXXXX Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish; which...


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