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HYG037N03LQ1D

HUAYI
Part Number HYG037N03LQ1D
Manufacturer HUAYI
Description N-Channel MOSFET
Published Feb 25, 2019
Detailed Description HYG037N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/85A RDS(ON)= 3.5mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(ty...
Datasheet PDF File HYG037N03LQ1D PDF File

HYG037N03LQ1D
HYG037N03LQ1D

Overview
HYG037N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/85A RDS(ON)= 3.
5mΩ(typ.
)@VGS = 10V RDS(ON)= 5.
8mΩ(typ.
)@VGS = 4.
5V  100% Avalanche Tested  Reliable and Rugged  Halogen free and Green Devices Available (RoHS Compliant) Pin Description GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information N-Channel MOSFET D G037N03 XYMXXXXXX U G037N03 XYMXXXXXX V G037N03 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish...


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