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HYG082N03LR1S

HUAYI
Part Number HYG082N03LR1S
Manufacturer HUAYI
Description N-Channel Enhancement Mode MOSFET
Published Feb 25, 2019
Detailed Description HYG082N03LR1S N-Channel Enhancement Mode MOSFET Feature  30V/11A RDS(ON)=7.3mΩ(typ.)@VGS = 10V RDS(ON)=11 mΩ(typ.)@VG...
Datasheet PDF File HYG082N03LR1S PDF File

HYG082N03LR1S
HYG082N03LR1S

Overview
HYG082N03LR1S N-Channel Enhancement Mode MOSFET Feature  30V/11A RDS(ON)=7.
3mΩ(typ.
)@VGS = 10V RDS(ON)=11 mΩ(typ.
)@VGS = 4.
5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description SOP8L Applications  Power Management for DC/DC  Switching Application  Battery Protection Ordering and Marking Information S G082N03 XYWXXXXXX N-Channel MOSFET Package Code S: SOP8L Date Code XYWXXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves...


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