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T2G6003028-FL

qorvo
Part Number T2G6003028-FL
Manufacturer qorvo
Description GaN RF Power Transistor
Published Feb 27, 2019
Detailed Description T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional...
Datasheet PDF File T2G6003028-FL PDF File

T2G6003028-FL
T2G6003028-FL

Overview
T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Wideband or narrowband amplifiers • Jammers Product Features • Frequency: DC to 6 GHz • Output Power (P3dB): 42.
7 W at 3 GHz • Linear Gain: >14 dB at 3 GHz • Operating Voltage: 28 V • Low thermal resistance package Functional Block Diagram General Description The Qorvo T2G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz.
The device is constructed with Qorvo’s proven QGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bia...


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