DatasheetsPDF.com

PHPT61002NYC

nexperia
Part Number PHPT61002NYC
Manufacturer nexperia
Description NPN Transistor
Published Mar 2, 2019
Detailed Description PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NP...
Datasheet PDF File PHPT61002NYC PDF File

PHPT61002NYC
PHPT61002NYC

Overview
PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1.
General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT61002PYC 2.
Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK • High energy efficiency due to less heat generation 3.
Applications • Load switch • Power management • Linear mode voltage regulator • Backlighting apllications 4.
Quick reference data Table 1.
Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current single pulse; tp ≤ 1 ms collector-emitter saturation resistance IC = 2 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.
02 ; Tamb = 25 °C Min Typ Max Unit - - 100 V - - 2A - ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)