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PDTA113EMB

nexperia
Part Number PDTA113EMB
Manufacturer nexperia
Description PNP resistor-equipped transistor
Published Mar 4, 2019
Detailed Description SOT883B PDTA113EMB PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev. 1 — 4 April 2012 Product data sheet ...
Datasheet PDF File PDTA113EMB PDF File

PDTA113EMB
PDTA113EMB

Overview
SOT883B PDTA113EMB PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev.
1 — 4 April 2012 Product data sheet 1.
Product profile 1.
1 General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTC113EMB.
1.
2 Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified  Leadless ultra small SMD plastic package  Low package height of 0.
37 mm 1.
3 Applications  Low-current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications  Mobile applications 1.
4 Quick reference data Table 1.
Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio Conditions open base Tamb = 25 °C Min...


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