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A2I35H060NR1

NXP
Part Number A2I35H060NR1
Manufacturer NXP
Description RF LDMOS Wideband Integrated Power Amplifiers
Published Mar 6, 2019
Detailed Description Freescale Semiconductor Technical Data Document Number: A2I35H060N Rev. 0, 4/2016 RF LDMOS Wideband Integrated Power A...
Datasheet PDF File A2I35H060NR1 PDF File

A2I35H060NR1
A2I35H060NR1

Overview
Freescale Semiconductor Technical Data Document Number: A2I35H060N Rev.
0, 4/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 3400 to 3800 MHz.
This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.
3500 MHz  Typical Doherty Single--Carrier W--CDMA Characterization Performance: PVVrDGoDSb2a=Bb2=il8it1yV.
3odncV,CdIcDC,QDP1FoA.
u=t(1=)5610mWA,AIDvQg.
2,AIn=p1u4t 1SimgnAa,lVPGASR1B==9.
19.
6dBVd@c, 0.
01% Frequency 3400 MHz 3500 MHz 3600 MHz Gps (dB) 24.
0 24.
0 23.
7 PAE (%) 32.
5 32.
4 31.
3 ACPR (dBc) –33.
4 –37.
0 –39.
0 Features  Advanced High Performance In--Package Doherty  On--Chip Matching (50 Ohm Input, DC Blocked)  Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)  Designed for Digital Predistortion Error Correction Systems A2I...


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