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A2I20H080NR1

NXP
Part Number A2I20H080NR1
Manufacturer NXP
Description RF LDMOS Wideband Integrated Power Amplifiers
Published Mar 6, 2019
Detailed Description Freescale Semiconductor Technical Data Document Number: A2I20H080N Rev. 0, 3/2016 RF LDMOS Wideband Integrated Power A...
Datasheet PDF File A2I20H080NR1 PDF File

A2I20H080NR1
A2I20H080NR1

Overview
Freescale Semiconductor Technical Data Document Number: A2I20H080N Rev.
0, 3/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20H080N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 1800 to 2200 MHz.
This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.
1800 MHz  Typical Doherty Single--Carrier W--CDMA Characterization Performance: VPVDGroDSb2=aBb3=il0it1yV.
2od5nc,VCIdDCcQD,1PFA.
o(=1u)t3=01m3A.
5, WIDQA2vAg=.
, 1In9p5umt SAi,gnVaGlSP1ABR= 1.
35 Vdc, = 9.
9 dB @ 0.
01% Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 28.
4 28.
2 27.
9 PAE (%) 42...


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