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IRF7342PbF

Infineon
Part Number IRF7342PbF
Manufacturer Infineon
Description Power MOSFET
Published Mar 11, 2019
Detailed Description    Generation V Technology  Ultra Low On-Resistance  Dual P Channel MOSFET  Surface Mount  Available in Tape & Reel...
Datasheet PDF File IRF7342PbF PDF File

IRF7342PbF
IRF7342PbF

Overview
   Generation V Technology  Ultra Low On-Resistance  Dual P Channel MOSFET  Surface Mount  Available in Tape & Reel  Dynamic dv/dt Rating  Fast Switching  Lead-Free   S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View IRF7342PbF HEXFET® Power MOSFET VDSS -55V RDS(on) max.
ID 0.
105 -3.
4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically r...


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