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IDDD06G65C6

Infineon
Part Number IDDD06G65C6
Manufacturer Infineon
Description 650V SiC Schottky Diode
Published Mar 12, 2019
Detailed Description IDDD06G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation G is the leading edge technology f...
Datasheet PDF File IDDD06G65C6 PDF File

IDDD06G65C6
IDDD06G65C6

Overview
IDDD06G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation G is the leading edge technology from Infineon for the SiC Schottky barrier diodes.
The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system.
The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF .
The CoolSiC™ Schottky diode V G has been designed to complement our V and V CoolMOS™ families, meeting the most stringent application requirements in this voltage range.
Table 1 Key performance parameters Parameter Value Unit VRRM 650 V QC (VR = 400 V) 9.
6 nC EC (VR = 400 V) IF (TC ≤ 0 °C, D = 1) 1.
6 6 µJ A VF (IF = 6 A, Tj = 25 °C) 1.
25 V Table 2 Package information Type / ordering Code Package IDDD06G65C6 PG-HDSOP-10-1 Marking D0665C6 PG-HDSOP-10-1 Cathode Pin 6-10 Pin 3-5 Pin 1-2: n.
c.
Pin 3-5: Anode Pin 6-1...


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