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120N03

GFD
Part Number 120N03
Manufacturer GFD
Description MOSFET
Published Mar 12, 2019
Detailed Description DESCRIPTION The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . ...
Datasheet PDF File 120N03 PDF File

120N03
120N03

Overview
DESCRIPTION The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .
It can be used in a wide Vanety of applications .
120N03 VDS 30V RDS(ON) ID 2.
5mΩ 120A GENERAL FEATURES � VDS = 30 V, ID = 120 A RDS(ON) < 4 mΩ @ VGS = 10 V (Typ:2.
5mΩ ) � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special process technology for high ESD capability Application � Power switching application � Hard Switched and High Frequency Circuits � Uninterruptible Power Supply Ordering Information PART NUMBER PACKAGE BRAND 120N03 TO-220 OGFD www.
goford.
cn TEL：0755-86350980 FAX：0755-86350963 120N03 Absolute Maximum Ratings (TC=25℃, unless otherwise noted) Symbol Parameter 120N03 Units VDS ID IDM PD VGS EAS TJ and TSTG Drain-to-Source Voltage Continuous Drain Current Drain Curr...


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