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2301

GFD
Part Number 2301
Manufacturer GFD
Description P-Channel Enhancement Mode Power MOSFET
Published Mar 12, 2019
Detailed Description 2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The 2301 uses advanced trench technology to provide excellent ...
Datasheet PDF File 2301 PDF File

2301
2301

Overview
2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.
5V RDS(ON) < 110mΩ @ VGS=-4.
5V D G S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package 2301 2301 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current -Pulsed (Note 1) IDM Maximum Power Dissipation PD...


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