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YJG85G06A

Yangzhou Yangjie
Part Number YJG85G06A
Manufacturer Yangzhou Yangjie
Description N-Channel Enhancement Mode Field Effect Transistor
Published Mar 13, 2019
Detailed Description YJG85G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● ID (Package ...
Datasheet PDF File YJG85G06A PDF File

YJG85G06A
YJG85G06A

Overview
YJG85G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● ID (Package limited) ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.
5V) ● 100% UIS Tested ● 100% ▽VDS Tested 60V 130A 85A ＜3.
0 mohm ＜4.
5 mohm General Description ● Split Gate Trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ● Synchronous-rectification applications ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Drain Current A Pulsed Drain Current B TC=25℃ TC=100℃ A...


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