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YJD80G06A

Yangzhou Yangjie
Part Number YJD80G06A
Manufacturer Yangzhou Yangjie
Description N-Channel Enhancement Mode Field Effect Transistor
Published Mar 13, 2019
Detailed Description YJD80G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at ...
Datasheet PDF File YJD80G06A PDF File

YJD80G06A
YJD80G06A

Overview
YJD80G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.
5V) ● 100% UIS Tested ● 100% ▽VDS Tested 60V 80A ＜8 mohm ＜11 mohm General Description ● Split Gate Trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ● Industrial and Motor Drive applications ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TC=25℃ TC=100℃ Avalanche energy B Total Power Dissipation TC=2...


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