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PDTB113ET

NXP
Part Number PDTB113ET
Manufacturer NXP
Description 50V resistor-equipped transistor
Published Mar 14, 2019
Detailed Description PDTB113ET PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev. 3 — 14 September 2010 Product data...
Datasheet PDF File PDTB113ET PDF File

PDTB113ET
PDTB113ET

Overview
PDTB113ET PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev.
3 — 14 September 2010 Product data sheet 1.
Product profile 1.
1 General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTD113ET.
1.
2 Features and benefits „ 500 mA output current capability „ Built-in bias resistors „ Simplifies circuit design „ Reduces component count „ Reduces pick and place costs „ ±10 % resistor ratio tolerance „ AEC-Q101 qualified 1.
3 Applications „ Digital application in automotive and industrial segments „ Control of IC inputs „ Cost-saving alternative for BC807 series in digit...


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