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IRF4104GPbF

International Rectifier
Part Number IRF4104GPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 15, 2019
Detailed Description PD - 96350 Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switch...
Datasheet PDF File IRF4104GPbF PDF File

IRF4104GPbF
IRF4104GPbF

Overview
PD - 96350 Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
G Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silico...


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