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AM2931-110

STMicroelectronics
Part Number AM2931-110
Manufacturer STMicroelectronics
Description S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
Published Mar 23, 2005
Detailed Description AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER ...
Datasheet PDF File AM2931-110 PDF File

AM2931-110
AM2931-110

Overview
AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .
.
.
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 105 W MIN.
WITH 6.
2 dB GAIN .
400 x .
500 2L SFL (S138) hermetically sealed ORDER CODE AM2931-110 BRANDING 2931-110 DESCRIPTION The AM2931-110 is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR.
Low RF thermal resistance, refractory/go...


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