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SFP120N120

SCILICON
Part Number SFP120N120
Manufacturer SCILICON
Description N-MOSFET
Published Mar 22, 2019
Detailed Description Features  Adanced trench process technonlog  Extremely low on-resistance RDS(on)  High Ruggedness  100% Avalance Tes...
Datasheet PDF File SFP120N120 PDF File

SFP120N120
SFP120N120

Overview
Features  Adanced trench process technonlog  Extremely low on-resistance RDS(on)  High Ruggedness  100% Avalance Tested Application  Power Management in inverter System  Synchronous Rectificatiou SFP(B)120N120 N-MOSFET 120V,120A, 8.
0mΩ Product Summary VDS RDS(on)@VGS=10V ID 120V 8.
0 mΩ 120A Part ID Package Type SFP120N120 TO-220 SFB120N120 TO-263 Marking 120N120 120N120 Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Package limit) TC = 100°C (Package limit) Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=0.
033mH,VDS=80V) Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Symbol VDS ID ID pulse EAS VGS Ptot Tj , Tstg Value 120 120 90 480 600 ±20 230 -55.
.
.
+150 Unit V A mJ V W ℃ Thermal Resistance Parameter Thermal resistance, junction – case.
Max Thermal resistance, junction – ambient.
Max Symbol RthJC RthJA Value 0.
55 62.
0 U...


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