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MA4AGBL912

MA-COM
Part Number MA4AGBL912
Manufacturer MA-COM
Description AlGaAs Beamlead PIN Diode
Published Mar 23, 2019
Detailed Description MA4AGBL912 AlGaAs Beamlead PIN Diode Features  Low Series Resistance  Low Capacitance  5 Nanosecond Switching Speed ...
Datasheet PDF File MA4AGBL912 PDF File

MA4AGBL912
MA4AGBL912

Overview
MA4AGBL912 AlGaAs Beamlead PIN Diode Features  Low Series Resistance  Low Capacitance  5 Nanosecond Switching Speed  Can be Driven by a Buffered +5V TTL  Silicon Nitride Passivation  Polyimide Scratch Protection  RoHS Compliant Description M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode.
AlGaAs anodes, which utilize M/A-COM Tech’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices.
This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasitics.
The result is a diode with low series resistance, 4Ω, low capacitance, 28fF, and an extremely fast switching speed of 5nS.
It is fully passivated with silicon nitride and has an additional polymer coating for scratch protection.
The protective coating prevents damage to the junction and the anode air bridges during handling and assemb...


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