DatasheetsPDF.com

SPN75T10

SYNC POWER
Part Number SPN75T10
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Mar 26, 2019
Detailed Description SPN75T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN75T10 is the N-Channel logic enhancement mode power field...
Datasheet PDF File SPN75T10 PDF File

SPN75T10
SPN75T10


Overview
SPN75T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN75T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
FEATURES  100V/80A,RDS(ON)=9.
2mΩ@VGS=10V  100V/80A,RDS(ON)=14mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L/TO-220F-3L/TO-252-2L/PPAK5x6-8L package design APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Power Tool  Motor Control PIN CONFIGURATION TO-220-3L TO-220F-3L PPAK5x6-8L TO252-2L PART MARKING 2020/05/05 Ver 2 Page 1 SPN75T10 N-Channel Enhancement Mode MOSFET TO-220/TO-220F/TO-252 PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source PPAK5x6 PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN75T10T220TGB TO-220-3L SPN75T10T220FTGB TO-220F-3L SPN75T10T252RGB TO-252-2L SPN75T10DN8RGB PPAK5x6-8L ※ SPN75T10T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN75T10T220FTGB : Tube ; Pb – Free ; Halogen – Free ※ SPN75T10T252RGB : Tape Reel ; Pb – Free ; Halogen – Free ※ SPN75T10DN8RGB : Tape Reel ; Pb – Free ; Halogen – Free Part Marking SPN75T10 SPN75T10 SPN75T10 SPN75T10 2020/05/05 Ver 2 Page 2 SPN75T10 N-Channel Enhancement Mode MOSFET ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(Silicon Limited) Pulsed Drain Current TC=25℃ TC=100℃ Power Dissipation@ TC=25℃ TO-220 Power Dissipa...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)