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IPB034N06L3G


Part Number IPB034N06L3G
Manufacturer Infineon
Title Power Transistor
Description Jf]R "%&$!"#™3 Power-Transistor Features R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R) AE: :K65 E649? @=@8J 7@C    4@? G6CE6CD...
Features R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R) AE: :K65 E649? @=@8J 7@C    4@? G6CE6CD R I46==6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '  R/ 6CJ =@H @? C6D:DE2 ? 46 , 9I"\[# R( 492 ? ? 6= =@8:4 =6G6= R  2 G2 =2 ? 496 E6DE65 R* 3 7C66 A=2 E:? 8 , @" - 4@ A=:2 ? E R+ F2 =:...

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IPB034N06L3 : Jf]R "%&$!"#™3 Power-Transistor Features R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R) AE: :K65 E649? @=@8J 7@C    4@? G6CE6CD R I46==6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '  R/ 6CJ =@H @? C6D:DE2 ? 46 , 9I"\[# R( 492 ? ? 6= =@8:4 =6G6= R  2 G2 =2 ? 496 E6DE65 R* 3 7C66 A=2 E:? 8 , @" - 4@ A=:2 ? E R+ F2 =:7:65 2 44@C5:? 8 E@ $     )# 7@CE2 C86E2 AA=:42 E:@? D R" 2 =@86? 7C66 2 44@C5:? 8 E@ #        Type #*    (  &  ! #* #   (  &  ! IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Product Summary V 9I R  - @?  2 I - '   I9 .( K +&, Z" 1( 6 AC6G:@FD6? 8:? 66C:? 8 D2 A=6 4@56D ?FF(,eD(.B ?F?(,eD(.B ?F7(,eD(.B #* * .

IPB034N06L3G : Isc N-Channel MOSFET Transistor IPB034N06L3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 90 90 360 PD Total Dissipation @TC=25℃ 167 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) .




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