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11E4

Part Number	11E4
Manufacturer	EIC
Description	SILICON RECTIFIER DIODES
Published	Mar 31, 2019
Detailed Description	www.eicsemi.com 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge cur...
Datasheet	11E4 PDF File

Overview

www.
eicsemi.
com 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.
0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.
339 gram SILICON RECTIFIER DIODES DO - 41 0.
107 (2.
7) 0.
080 (2.
0) 0.
034 (0.
86) 0.
028 (0.
71) 1.
00 (25.
4) MIN.
0.
205 (5.
2) 0.
166 (4.
2) 1.
00 (25.
4) MIN.
Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Curren...

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