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SFTN3005R

Winning Team
Part Number SFTN3005R
Manufacturer Winning Team
Description N-Channel MOSFET
Published Apr 1, 2019
Detailed Description SFTN3005R N-Channel Enhancement Mode MOSFET Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolu...
Datasheet PDF File SFTN3005R PDF File

SFTN3005R
SFTN3005R

Overview
SFTN3005R N-Channel Enhancement Mode MOSFET Drain Gate Source 1.
Gate 2.
Drain 3.
Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Peak Drain Current Avalanche Current, L = 0.
1 mH Avalanche Energy, L = 0.
1 mH Power Dissipation Power Dissipation Operating Junction and Storage Temperature Range TA = 25℃ TA = 70℃ TC = 25℃ TC = 70℃ TA = 25℃ TC = 25℃ Symbol VDS VGS ID ID IDM IAR EAS PD PD TJ,Tstg Value 30 ± 20 11.
8 9.
5 48 38 120 15 11.
25 2 32.
9 - 55 to 150 Unit V V A A A A mJ W W ℃ Thermal Characteristics Parameter Symbol Max.
Unit Thermal Resistance from Juntion to Ambient 1) RθJA 62 ℃/W Thermal Resistance from Juntion to Case RθJC 3.
8 ℃/W 1) RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined...


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