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SFTN0865

Winning Team
Part Number SFTN0865
Manufacturer Winning Team
Description N-Channel MOSFET
Published Apr 1, 2019
Detailed Description SFTN0865 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Abs...
Datasheet PDF File SFTN0865 PDF File

SFTN0865
SFTN0865

Overview
SFTN0865 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current 1) Drain Current - Pulsed 1) TC = 25℃ TC = 100℃ Power Dissipation Operating Junction Temperature Storage Temperature Range 1) Drain current limited by maximum junction temperature.
Symbol VDS VGS ID IDM Ptot Tj Tstg Value 650 ± 30 8 5 18 40.
3 150 - 55 to + 150 Unit V V A A W ℃ ℃ Thermal Characteristics Parameter Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient Symbol RθJC RθJA Max.
3.
1 62.
5 Unit ℃/W ℃/W Winning Team Dated: 2...


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