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SFTN3568

Part Number	SFTN3568
Manufacturer	Winning Team
Description	N-Channel MOSFET
Published	Apr 1, 2019
Detailed Description	SFTN3568 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Ab...
Datasheet	SFTN3568 PDF File

Overview

SFTN3568 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current t = 1 ms Power Dissipation Single Pulse Avalanche energy 1) Storage Temperature Operating Junction Temperature 1) VDD = 90 V, Tch = 25°C(initial), L = 4.
3 mH, IAR = 12 A, RG = 25 Ω.
Symbol VDS VGS ID IDM Ptot EAS Tstg TJ Value 500 ± 30 12 48 40 364 - 55 to + 150 150 Unit V V A A W mJ ℃ ℃ Thermal Characteristics Parameter Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient Symbol RθJC RθJA Max.
3.
125 62.
5 Un...

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SFTN3568 N-Channel MOSFET - Winning Team

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