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SFTN1850

Winning Team
Part Number SFTN1850
Manufacturer Winning Team
Description N-Channel MOSFET
Published Apr 1, 2019
Detailed Description SFTN1850 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Abs...
Datasheet PDF File SFTN1850 PDF File

SFTN1850
SFTN1850

Overview
SFTN1850 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Parameter Symbol Value Drain-Source Voltage Gate-Source Voltage Drain Current 1) TC = 25℃ Peak Drain Current 1) 2) Avalanche energy,single pulse 3) TC = 100℃ Power Dissipation TC = 25℃ Maximum Thermal Resistance from Juntion to Case2) Maximum Thermal Resistance from Juntion to Ambient 2) VDS VGS ID IDM EAS Ptot RθJC RθJA 500 ± 30 18 11 72 950 37 3.
4 62.
5 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 1) Id limitedby maximumjunctiontemperature.
2) Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
3) L = 5.
3 mH, IAS = 18.
0 A,VDD = 50 V,Rg = 25Ω,Starting Tj = 25 °C.
Unit V V A A mJ W ℃/W ℃/W ℃ Winning Team Dated: 10/01/2018 SFTN1850 Characteristics at TJ = 25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltag...


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