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F59L1G81LB-25BCG2M

Part Number	F59L1G81LB-25BCG2M
Manufacturer	ESMT
Description	1 Gbit (128M x 8) 3.3V NAND Flash Memory
Published	Apr 2, 2019
Detailed Description	ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Reg...
Datasheet	F59L1G81LB-25BCG2M PDF File

Overview

ESMT Flash FEATURES  Voltage Supply: 3.
3V (2.
7V~3.
6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte  Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.
) - Serial Access: 25ns (Min.
) (3.
3V)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time - Program time: 400us - typical - Block Erase time: 4ms - typical  Command/Address/Data Multiplexed I/O Port  Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L1G81LB (2M) 1 Gbit (128M x 8) 3.
3V NAND Flash Memory  Reliable CMOS Floating Gate Technology - ECC Req...

Similar Datasheet

F59L1G81LB-25BCG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory - ESMT

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