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TSM120NA03CR

Part Number	TSM120NA03CR
Manufacturer	Taiwan Semiconductor
Description	N-Channel Power MOSFET
Published	Apr 4, 2019
Detailed Description	TSM120NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 39A, 11.7mΩ FEATURES ● Low RDS(ON) to minimize conductiv...
Datasheet	TSM120NA03CR PDF File

Overview

TSM120NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 39A, 11.
7mΩ FEATURES ● Low RDS(ON) to minimize conductive loss ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC-DC Converters ● Battery Power Management ● ORing FET/Load Switch KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) VDS VGS = 10V VGS = 4.
5V Qg 30 11.
7 14.
9 4.
5 V mΩ nC PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-S...

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TSM120NA03CR N-Channel Power MOSFET - Taiwan Semiconductor

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