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TSM025NB04LCR

Taiwan Semiconductor
Part Number TSM025NB04LCR
Manufacturer Taiwan Semiconductor
Description N-Channel Power MOSFET
Published Apr 4, 2019
Detailed Description TSM025NB04LCR Taiwan Semiconductor N-Channel Power MOSFET 40V, 161A, 2.5mΩ FEATURES ● Low RDS(ON) to minimize conducti...
Datasheet PDF File TSM025NB04LCR PDF File

TSM025NB04LCR
TSM025NB04LCR


Overview
TSM025NB04LCR Taiwan Semiconductor N-Channel Power MOSFET 40V, 161A, 2.
5mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested.
● 175°C Operating Junction Temperature ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● BLDC Motor Control ● Battery Power Management ● DC-DC converter ● Secondary Synchronous Rectification PDFN56 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.
5V Qg 40 2.
5 3.
2 57 V mΩ nC Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) TC = 25°C TA = 25°C VDS VGS ID 40 ±20 161 24 Pulsed Drain Current Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche E...



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