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TSM60NB1R4CP

Part Number	TSM60NB1R4CP
Manufacturer	Taiwan Semiconductor
Description	N-Channel Power MOSFET
Published	Apr 4, 2019
Detailed Description	TSM60NB1R4CP Taiwan Semiconductor N-Channel Power MOSFET 600V, 3A, 1.4Ω FEATURES ● Super-Junction technology ● High pe...
Datasheet	TSM60NB1R4CP PDF File

Overview

TSM60NB1R4CP Taiwan Semiconductor N-Channel Power MOSFET 600V, 3A, 1.
4Ω FEATURES ● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance ● 100% UIL tested ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 600 V 1.
4 Ω 7.
12 nC APPLICATIONS ● Power Supply ● Lighting TO-252 (DPAK) Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-So...

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TSM60NB1R4CP N-Channel Power MOSFET - Taiwan Semiconductor

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