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TSM018NA03CR

Taiwan Semiconductor
Part Number TSM018NA03CR
Manufacturer Taiwan Semiconductor
Description N-Channel Power MOSFET
Published Apr 4, 2019
Detailed Description TSM018NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 185A, 1.8mΩ FEATURES ● Low RDS(ON) to minimize conductiv...
Datasheet PDF File TSM018NA03CR PDF File

TSM018NA03CR
TSM018NA03CR

Overview
TSM018NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 185A, 1.
8mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.
5V Qg 30 1.
8 2.
4 28 V mΩ nC APPLICATIONS ● DC-DC Converters ● Battery Power Management ● ORing FET/Load Switching PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy (Note 2) TC = 25°C TA = 25°C VDS VGS ID IDM IAS EAS 30 ±20 185 29 740 41 252 Total Power Dissipation TC = 25°C TC = 125°C Tota...


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