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HY3208A

HOOYI
Part Number HY3208A
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published Apr 4, 2019
Detailed Description HY3208AP/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted)...
Datasheet PDF File HY3208A PDF File

HY3208A
HY3208A

Overview
HY3208AP/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 80 ±25 175 55 to- 175 120 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480** 120 85 227 113 0.
66 62.
5 EAS Avalanche Energy, Single Pulsed L=0.
5mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=64V 630*** Electrical Characteristics (T C = 25°C Unless Otherwise Noted) Unit V °C °C A A A W °C/W mJ Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage ...


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