DatasheetsPDF.com

OPA7716WDD

AUK
Part Number OPA7716WDD
Manufacturer AUK
Description Infrared LED Chip
Published Apr 9, 2019
Detailed Description OPA7716WDD Infrared LED Chip AlGaAs / GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer AlGaAs(P/N Type) 2....
Datasheet PDF File OPA7716WDD PDF File

OPA7716WDD
OPA7716WDD

Overview
OPA7716WDD Infrared LED Chip AlGaAs / GaAs 1.
Material Substrate GaAs (N Type) Epitaxial Layer AlGaAs(P/N Type) 2.
Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3.
Electro-Optical Parameter Symbol Min Typ Max Unit Condition Characteristics Forward Voltage VF 2.
0 V IF=50mA Reverse Current VR 8 V IR=10uA Power PO 9 mW IF=50mA Wavelength λP ∆λ 770 30 nm IF=50mA nm IF=50mA ※ Note : Power is measured by Sorter E/T system with bare chip.
4.
Mechanical Data (a) Emission Area (b) Bottom Area (c) Bonding Pad (d) Chip Thickness -------------------- 15.
0mil x 15.
0mil -------------------- 16.
0mil x 16.
0mil -------------------- 130um -------------------- 7.
8mil (b)...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)