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MKIRF4N65

Global Semiconductor
Part Number MKIRF4N65
Manufacturer Global Semiconductor
Description POWER MOSFET
Published Apr 14, 2019
Detailed Description MCIRF4N65 MFIRF4N65 MKIRF4N65 MJIRF4N65 ID = 4A VDS = 650V RDS(on)MAX = 2.3Ω Major Ratings and Characteristics Charac...
Datasheet PDF File MKIRF4N65 PDF File

MKIRF4N65
MKIRF4N65

Overview
MCIRF4N65 MFIRF4N65 MKIRF4N65 MJIRF4N65 ID = 4A VDS = 650V RDS(on)MAX = 2.
3Ω Major Ratings and Characteristics Characteristics Values Units IDS 4 A IDM 16 A VDS 650 V VGS TJ T storage ±30 150 -55 ~150 V ℃ ℃ POWER MOSFET Description/ Features The MCIRF4N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
The new energy efficient design also offers a drainto-source diode with a fast recovery time.
Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
● 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant Case Styles ...


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