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MCIRF2N65

Global Semiconductor
Part Number MCIRF2N65
Manufacturer Global Semiconductor
Description POWER MOSFET
Published Apr 14, 2019
Detailed Description MCIRF2N65 MFIRF2N65 MKIRF2N65 MJIRF2N65 ID = 2.0A VDS = 650V RDS(on)MAX = 5.0Ω Major Ratings and Characteristics Char...
Datasheet PDF File MCIRF2N65 PDF File

MCIRF2N65
MCIRF2N65

Overview
MCIRF2N65 MFIRF2N65 MKIRF2N65 MJIRF2N65 ID = 2.
0A VDS = 650V RDS(on)MAX = 5.
0Ω Major Ratings and Characteristics Characteristics Values Units ID 2.
0 A IDM 8.
0 A VDS 650 V VGS TJ T storage ±30 150 -55 ~150 V ℃ ℃ POWER MOSFET Description/ Features The MCIRF2N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
The new energy efficient design also offers a drainto-source diode with a fast recovery time.
Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
● 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant Case Sty...


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