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MCIRF10N65

Global Semiconductor
Part Number MCIRF10N65
Manufacturer Global Semiconductor
Description POWER MOSFET
Published Apr 14, 2019
Detailed Description MFIRF10N65 MCIRF10N65 ID = 10A VDS = 650V RDS(on)MAX = 0.8Ω Major Ratings and Characteristics Characteristics Values...
Datasheet PDF File MCIRF10N65 PDF File

MCIRF10N65
MCIRF10N65

Overview
MFIRF10N65 MCIRF10N65 ID = 10A VDS = 650V RDS(on)MAX = 0.
8Ω Major Ratings and Characteristics Characteristics Values Units ID 10 A IDM 40 A VDS 650 V VGS TJ T storage ±30 150 -55 ~150 V ℃ ℃ POWER MOSFET Description/ Features The MFIRF10N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
The new energy efficient design also offers a drainto-source diode with a fast recovery time.
Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
● 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant Case Styles Ordering Infor...


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