MITSUBISHI SEMICONDUCTORS
M81019FP
1200V HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION M81019FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications.
FEATURES ¡Floating supply voltage up to 1200V ¡Low quiescent power supply current ¡Separate sink and source current output up to ±1A (typ) ¡Active Miller effect clamp NMOS with sink current up to –1A (typ) ¡Input noise filters ¡Over-current detection and output shutdown ¡High side under voltage lockout ¡FO pin which can input and output Fault signals to commu-
nicate with controllers and synchronize the shut down with other phases ¡Pb-free ¡24-Lead SSOP package
PIN CONFIGURATION (TOP VIEW)
NC NC VB HPOUT HNOUT1 HNOUT2 VS NC NC NC NC NC
APPLICATIONS Power MOSFET and IGBT gate driver for Medium and Micro inverter or general purpose.
Outline: 24P2Q
24 13 1 12
NC HIN LIN FO_RST CIN GND FO VCC LPOUT LNOUT1 LNOUT2 VNO
BLOCK DIAGRAM
GND
UV
Logic Filter
HIN LIN
CIN
+ Vref –
FO_RST
Inter...
M81019FP PDF File
