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RA60H3847M1

Mitsubishi
Part Number RA60H3847M1
Manufacturer Mitsubishi
Description Silicon RF Power Modules
Published Apr 16, 2019
Detailed Description < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTI...
Datasheet PDF File RA60H3847M1 PDF File

RA60H3847M1
RA60H3847M1

Overview
< Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.
5V, 2 Stage Amp.
For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.
5-volt mobile radios that operate in the 378- to 470-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.
Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB.
The output power and the drain current increase as the gate voltage increases.
The output power and the drain current increase substantially with the gate voltage around 0V(minimum).
The nominal output pow...


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