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ISL73024SEH

Part Number	ISL73024SEH
Manufacturer	Intersil
Description	7.5A Enhancement Mode GaN Power Transistor
Published	Apr 17, 2019
Detailed Description	DATASHEET ISL70024SEH, ISL73024SEH 200V, 7.5A Enhancement Mode GaN Power Transistor FN8976 Rev.5.00 Aug 16, 2019 The ...
Datasheet	ISL73024SEH PDF File

Overview

DATASHEET ISL70024SEH, ISL73024SEH 200V, 7.
5A Enhancement Mode GaN Power Transistor FN8976 Rev.
5.
00 Aug 16, 2019 The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement mode GaN power transistors.
These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation.
Applications for these devices include commercial aerospace, medical, and nuclear power generation.
GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR.
The end result is a device that can operate a...

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ISL73024SEH 7.5A Enhancement Mode GaN Power Transistor - Intersil

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