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AL808T1000

ETC
Part Number AL808T1000
Manufacturer ETC
Description 808nm High-Power Laser Diode
Published Apr 18, 2019
Detailed Description 808 nm High-Power Laser Diode (AL808T1000) Features: Output power: 1w(CW) Variety of stripe width Efficient quantum well...
Datasheet PDF File AL808T1000 PDF File

AL808T1000
AL808T1000

Overview
808 nm High-Power Laser Diode (AL808T1000) Features: Output power: 1w(CW) Variety of stripe width Efficient quantum well structure Application: Solid-state laser pumping Medical usage Beacons and Illumination Free-space communication Infrared light sources Specifications: Parameter CW output power (mW) Peak wavelength (nm) Spectral width (nm) Threshold current (A) Operating current (mA) Operating voltage (V) Slope efficiency (W/A) Beam divergence θ⊥×θ∥ (deg.
) Wavelength temperature coefficient (nm/℃) Emitting area (μm) Serial resistance (Ω) Lifetime(h) Package Value AL808T1000 1000 808±5 ≤5 ≤200 ≤1200 1.
8~2.
2 ≥0.
9 12/40 0.
3 100×1 ≤1.
5 10000 TO-5 TO-5 Package：(Unit: mm) TO3 Packing C-blo...


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