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NE68133 Datasheet PDF


Part Number NE68133
Manufacturer CEL
Title SILICON TRANSISTOR
Description The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. ...
Features
• NF
• Ga 1.2 dB TYP. 13 dB TYP. @f = 1.0 GHz @f = 1.0 GHz PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 +0.1 −0.15 0.4 2 13 +0.1 −0.05 2.9±0.2O 0.95 0.95 0.4 +0.1 −0.06 0.16 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 20 Collector to Emitter Voltage VCE...

File Size 1.70MB
Datasheet NE68133 PDF File








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NE68130 : The NE68130 / 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES • Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz • High gain : S21e2 = 12 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz • 3-pin super minimold package ORDERING INFORMATION Part Number NE68130 -A 2SC4227 -A NE68130-T1-A 2SC4227-T1-A Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The .

NE68139 : The NE68139 / 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique. 0.4 2 PACKAGE DIMENSIONS (Units: mm) +0.1 −0.05 +0.1 −0.05 2.8 +0.2 −0.3 1.5 +0.2 −0.1 3 0.4 (1.9) +0.1O −0.05 FEATURES • NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA • S21e2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Volta.




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