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2SC3583

CEL
Part Number 2SC3583
Manufacturer CEL
Description NPN Silicon Transistor
Published Apr 19, 2019
Detailed Description DDAATTAA SSHHEEEETT SILICON TRANSISTOR NE68133 / 2SC3583 JEITA Part No. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON ...
Datasheet PDF File 2SC3583 PDF File

2SC3583
2SC3583


Overview
DDAATTAA SSHHEEEETT SILICON TRANSISTOR NE68133 / 2SC3583 JEITA Part No.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR +0.
1UT −0.
05 1.
1PHASEto1.
4 0.
3 DESCRIPTION The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.
This is achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique.
FEATURES • NF • Ga 1.
2 dB TYP.
13 dB TYP.
@f = 1.
0 GHz @f = 1.
0 GHz PACKAGE DIMENSIONS (Units: mm) 2.
8±0.
2 1.
5 0.
...



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